A cost-effective 0.25 /spl mu/m L/sub eff/ BiCMOS technology featuring graded-channel CMOS (GCMOS) and a quasi-self-aligned (QSA) NPN for RF wireless applications

A cost-effective 0.25 /spl mu/m L/sub eff/ graded-channel BiCMOS technology is reported. GCMOS devices offer superior transconductance and short-channel effects to transistors with conventional laterally uniform channel doping. A complete suite of active and passive devices is offered.