High reliability InGaAsP/InP buried heterostructure lasers grown entirely by atmospheric MOVPE

S.P. Sim,A.P. Skeats,M.R. Taylor,M. Hockly,D.M. Cooper,A.W. Nelson,W.J. Devlin,J.C. Regnault

High reliability InGaAsP/InP buried heterostructure lasers grown entirely by atmospheric MOVPE

1988

S.P. Sim
A.P. Skeats
M.R. Taylor
M. Hockly
D.M. Cooper
A.W. Nelson
W.J. Devlin
J.C. Regnault

Results are presented which show for the first time the achievement of predicted median lifetimes of 3*10/sup 5/ hours at 80 degrees C, and 10/sup 7/ hours at 25 degrees C by buried heterostructure (BH) lasers grown entirely by atmospheric MOVPE. >

Keywords:

Metalorganic vapour phase epitaxy
Laser
Gallium arsenide
Heterojunction
Electronic engineering
Materials science
Optoelectronics
life testing

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