Photoconductive properties of ultrafine indium oxide particle layers

Abstract Ultrafine In 2 O 3 particle layers were prepared by gas evaporation of In in atmospheres of Ar, followed by oxidation in air, and their photoconductive behavior was investigated. The mean diameter of the In 2 O 3 particles was changed from 30 to 300 nm by changing the Ar pressure during the evaporation from 10 to 150 Torr. All the specimens showed photoconductivity associated with UV light irradiation. When the mean particle diameter decreased the photoconductive sensitivity decreased and the photocurrent decay time increased. It is concluded that the contribution of oxygen desorption and adsorption predominantly influences the photoconductivity in ultrafine In 2 O 3 particle layers.