Molecular beam epitaxial growth of HgCdTe on CdZnTe(311)B

A series of n-type, indium-doped Hg1−xCdxTe (x∼0.225) layers were grown on Cd0.96Zn0.04Te(311)B substrates by molecular beam epitaxy (MBE). The Cd0.96Zn0.04Te(311)B substrates (2 cm × 3 cm) were prepared in this laboratory by the horizontal Bridgman method using double-zone-refined 6N source materials. The Hg1−xCdxTe(311)B epitaxial films were examined by optical microscopy, defect etching, and Hall measurements. Preliminary results indicate that the n-type Hg1−xCdxTe(311)B and Hg1−xCdxTe(211)B films (x ∼ 0.225) grown by MBE have comparable morphological, structural, and electrical quality, with the best 77 K Hall mobility being 112,000 cm2/V·sec at carrier concentration of 1.9×10+15 cm−3.