Study on etching chemical vapor deposition diamond film by electron cyclotron resonance plasma

CVD diamond films were etched by plasma on a self-developed electron cyclotron resonance(ECR) device.Influences of substrate temperature,working pressure and magnetic field configuration on etching effect were studied.Results showed that the top of the grain on CVD film was etched preferentially and that the surface roughness Ra was reduced.The higher substrate temperature(150 ℃ compared with 20 ℃),the lower working pressure(2×10-3 Pa compared with 3×10-2 Pa),and the stronger magnetic field strength(0.2 T compared with 0.15 T) contributed to a better etching effect.