Microstructure of high-temperature annealed buried oxide silicon-on-insulator

The microstructure of buried oxide silicon‐on‐insulator (SOI) annealed in the temperature range of 1150–1300 °C was examined. The microstructure of the buried oxide SOI was improved by increasing the annealing temperature. The minimum channeling yield of the top silicon layer in 1250 °C annealed SOI measured by Rutherford backscattering and channeling analysis is 5% which is comparable to unprocessed bulk single crystal material. This is further verified by the cross‐sectional transmission electron microscopy observation of the precipitate‐free top silicon layer with low dislocation density. The improvement in the microstructure is attributed to the dissolution of oxygen precipitates and oxygen outdiffusion during high‐temperature annealing.