Performance evaluation of dielectric modulation and metalloid T-shaped source/drain on gate-all-around junctionless transistor for improved analog/RF application

In this work, the impact of SiO2 dielectric channel modulation along with metalloid T-shaped source-drain on the analog-RF characteristics of gate-all-around Junctionless Nanowire Transistor (JNT) has been analysed. Metalloid T-shaped source-drain contacts create the charge plasma therefore it is also referred as Charge Plasma Transistor (CPT). Impact of different source/drain materials on band gap energy, drain current, transconductance etc. is studied. Ambipolarity, Non-linear behavior and impact of high temperature on novel CPT-JNT device have also been analysed. A dielectric modulated CPT-JNT is proposed. Results demonstrate that charge plasma technique resolve the degeneracy problem of semiconductor in junctionless transistor. Use of dielectric pocket completely reduces the ambipolar nature of CPT-JNT. Use of Charge plasma technique along with gate-all-around junctionless transistor tremendously increases transconductance, device gain (current and power). The device is well suitable for analog/RF applications.