10 GHz/10 W internally matched flip-chip GaAs power f.e.t.s
1980
A flip-chip GaAs power f.e.t. delivering 10 W power output with 3 dB gain has been realised at 10 GHz by using a newly developed internal matching technique, in which the f.e.t. chips are directly connected to the lumped capacitors in the matching networks.
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