Growth of single-phase Cu(In,Al)Se2 photoabsorbing films by selenization using diethylselenide

Abstract Selenization growth of purely single-phase, polycrystalline CuIn 1 −  x Al x Se 2 (0 ≤  x  ≤ 0.26) alloy films was demonstrated using a less-hazardous metal-organic selenide, diethylselenide [(C 2 H 5 ) 2 Se: DESe], by simple thermal annealing of metal precursor. Approximately 2.0 µm thick alloy films exhibited X-ray diffraction peaks originating exclusively from the chalcopyrite structure. Transitions seen in the low temperature photoluminescence spectra were attributed to characteristic donor–acceptor pair emissions of the state-of-the-art CuIn 1 −  x Al x Se 2 photoabsorbing layers.