Masking Properties of Structures Based on a Triacrylamide Derivative of Polyfluorochalcone at Wet and Reactive Ion Etching

The masking properties are studied for polymeric structures based on a triacrylamide derivative of polyfluorochalcone at wet etching in aqueous acidic (H2SO4, H3PO4) and alkaline (NaOH) environments, as well as at reactive ion etching (CF4). The kinetic curves are obtained and the etching rates inherent in the photoresists are estimated. A comparison with commercially available photoresists AZ4562 and SU-8 is performed.