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High-current backside-illuminated InGaAs/InP p-i-n potodiode
High-current backside-illuminated InGaAs/InP p-i-n potodiode
2009
Itakura
Sakai
Nagatsuka
Akiyama
Hirano
Ishimura
Nakaji
Aoyagi
Keywords:
Indium phosphide
Gallium arsenide
Optoelectronics
microwave photonics
Photoconductivity
high current
Materials science
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