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Microwave Plasma Doping: As Activation and Transport in Ge and Si
Microwave Plasma Doping: As Activation and Transport in Ge and Si
2015
Hidenori Miyoshi
Masahiro Oka
Yuuki Kobayashi
Hirokazu Ueda
Peter L. G. Ventzek
Yasuhiro Sugimoto
G.Nakamura
Yoshihiro Hirota
Takanobu Kaitsuka
Satoru Kawakami
Keywords:
Doping
Ion source
Optoelectronics
Materials science
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