Comparison of Si- and SiC-powerdiodes in 100A-modules

This paper presents the comparison of transient behaviour of 6.5 kV Si- and SiC-power diodes in 100 A-modules. The switching behaviour at a current level of 100 A is shown at DC link voltages up to 3.5 kV and at a junction temperature up to 125degC using 25 A-6.5 kV-Si-IGBTs as switching devices. Different switching conditions in chopper circuits realize different rates of current decay up to 1000 A/mus. Furthermore the switching behavior in a series connection of two SiC diodes is shown at DC link voltages up to 10.2 kV in a 3-level npc inverter phase and at a junction temperature up to 90degC. Experimental results are discussed in terms of reverse recovery currents and snappiness.