Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

Muon-induced single-event upset cross sections are estimated for a 28-nm static random access memory (SRAM) using Monte Carlo simulations informed by ion test results. As an exercise in modeling with limited information, details of the 28-nm SRAM’s cell structure were not used (and not available) to inform choices of device model parameters such as sensitive volume dimensions and efficiencies. Instead, inferences were made based on heavy-ion and proton single event upset data. Volume dimensions were sufficiently small to resolve the charge collection profile resulting from highly localized low linear energy transfer particle strikes. Results are compared to muon experimental data taken at TRIUMF for validation. Rate predictions are made for the 28-nm SRAM using the calibrated model and compared to expected neutron rates. Muon-induced upset rates at sea level for both marginally reduced and significantly reduced electrical biases, as well as rates at 39 000 feet, are predicted to be significantly less than neutron rates in all these environments. This result is consistent with other authors’ efforts in similarly scaled bulk CMOS SRAMs, indicating that the modeling method used is reliable.