Basic of Pseudomorphic Hemts Technology and Numerical Simulation

This chapter consist of two parts. In the first part we describe the technology used in the Nanoelectronics Research Centre of Glasgow University for fabrication of high performance 200 - 100 nm gate length Pseudomorphic HEMTs (PsHEMTs). Most of the fabrication sequence is fairly standard and gives a good overall impression of the basic technological steps involved in the fabrication of modern PsHEMTs. There are however some specific solutions which distinguish our PsHEMT technology from the recipes adopted by other university and industry based groups. Among those ’secrets’ are the use of an As2 source with a low temperature AS4 cracker in the MBE growth of the vertical layer structure, and a new selective and low damage recess reactive ion dry etching process based on SiCl4/SiF4 chemistry.