Investigation of magnetotransistor double-well regions structure and process parameters influence on magnetic sensitivity value
2009
The influence of the location of p-well-n-well and n-well-p-substrate junctions and the well formation diffusion parameters on the double-well magnetotransistor magnetic sensitivity value was investigated by means of numerical modeling.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
1
References
0
Citations
NaN
KQI