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Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy
Improvement of (11-22) GaN on m-Plane Sapphire With CrN Interlayer by Using Molecular Beam Epitaxy
2011
Kuang-Wei Liu
Shoou-Jinn Chang
Sheng-Joue Young
Tao-Hung Hsueh
Hung Hung
Yu-Chun Mai
S. M. Wang
Yue-Zhang Chen
Keywords:
Analytical chemistry
Wide-bandgap semiconductor
Molecular beam epitaxy
Photoluminescence
X-ray crystallography
Dislocation
Chemistry
Sapphire
Optoelectronics
molecular beam epitaxial growth
Correction
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