Noise in Thin Films Metal‐Oxide‐Metal AlAl2O3Al

It is the purpose of this note to verify the existence of tunneling through the oxide layer of metal-oxide-metal structures. Noise measurements on thin AlAl2O3Al sandwiches (30 A thick) yield full shot noise at high frequencies (v > 1000 Hz) and v−3/2 noise for v < 1000 Hz. From conductivity and noise measurements the dependence of each individual tunnel current on voltage and temperature is determined. Experimental values of I1/I2 are in good agreement with the Boltzmann law owing to the tunneling process.