PbEuSeTe/Pb1-xSnxTe buried heterostructure diode lasers grown by molecular beam epitaxy

Buried heterostructure (BH) PbSnTe lasers were prepared in a two-stage MBE growth. Lasers with Pb1-xSnxTe (xequals0; 0.04; 0.05; 0.068; 0.095) buried active layer and a buried quantum well (BQW) Pb0.932Sn0.068Te active layers have been manufactures. A maximum continuous wave operating temperature of 203 K was recorded for a lattice matched PbTe active layer BH laser, and a maximum operating temperature of 189 K was recorded for the BQW laser.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.