Photoelectronic Properties of InAs/GaAs Nanostructures With Combined Quantum Well and Quantum Dot Layers Grown by Metal-Organic Vapor Phase Epitaxy

2000 
Abstract : Combination of quantum well (QW) and QD layers in the GaAs/In(x) GA(-x)AS nanostructures obtained by MOVPE result not only in well known "red shift" of the QD PL spectrum but also to splitting of the PL spectrum and of the photosensitivity spectrum of the QW. "Red shift" of one of these spectral features relative to the other is explained by diffusion of In from the QDs to the QW at their heterointerface.
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