Imaging and Spectroscopy of Interfaces and Surfaces with Advanced Electron Microscopy

Of prime importance in the study of materials’ interfaces is the use of Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) to examine the interfacial crystal structure, strain distribution, dopant profile and bonding state to understand the interfacial behavior. Traditionally, TEM has been the method of choice. With the development and implementation of aberration correction nanoprobe high-angle-annular-dark field (HAADF) imaging and energy loss spectroscopy in STEM become increasing popular with extraordinary ability to quantitatively study interface structure at atomic scale.