Noise Characterization of InAs Based DG-HEMT Devices for RF Applications

In this paper, we report the noise performance of a 50nm gate length InAs based DG-HEMT for high frequency applications. Normally the noise is predominant at the channel/barrier interface caused by scattering of carriers thus increasing the leakage mechanism. The noise spectral density, $\mathrm{S}_{\text{vg}}, \mathrm{S}_{\text{vd}}$ and $\mathrm{S}_{\text{ig}}, \mathrm{S}_{\text{id}}$ as a function of $\mathrm{V}_{\text{gs}}$ and $\mathrm{V}_{\text{ds}}$ and frequency are analyzed in detail, from these values NF min is also determined for double gate InAs HEMT. For 50nm DG-HEMT, $\text{NF}_{\min}$ of 1.2 dB at 710GHz with $\mathrm{V}_{\text{gs}}=0.3\mathrm{V}$ and $\mathrm{V}_{\text{ds}}$ = 0.5 V is obtained, making it suitable for LNA design for RF applications.