Non-Destructive and Destructive Shortcircuit Characterization of a High-Current SiC MOSFET

As power electronics systems strive for higher power density, SiC MOSFET technology is meeting these goals by creating smaller devices with lower losses (and therefore higher current densities). As these advancements are made, failure mode expectations of these devices need to be updated. This paper presents a shortcircuit characterization of a next generation Wolfspeed device. The 900 V, $10\ \mathrm{m}\Omega$ SiC MOSFET (CPM3-0900-0010A) is subjected to different shortcircuit tests in a TO-247 3 lead package. The non-destructive shortcircuit tests conducted show the behavior of the device at different drain-source voltages and gate resistances. Destructive tests at room temperature and high temperature show the withstand time and energy of the device at different conditions.