Kinetics of Si growth by an electron-beam-irradiation technique using a Si2H6 source

Room-temperature selective Si growth is possible by irradiating an electron beam on a Si surface in a Si2H6 ambient. The growth has an apparent substrate temperature dependence, such that the selective growth of Si is allowed at substrate temperatures only below 330 °C. We have found by the H2 thermal desorption experiments that the Si surface during the growth is covered with higher Si hydrides such as: SiH2, SiH3, and Si2H6 molecules. This indicates that the selective Si growth is caused by the higher Si hydrides. The reaction schemes of the Si growth are discussed in this article.