A CMOS-based Large-Area-High-Resolution Imaging System for High-Energy X-Ray Applications
2008
CCDs have been the primary sensor in imaging systems for x-ray diffraction and imaging
applications in recent years. CCDs have met the fundamental requirements of low noise,
high-sensitivity, high dynamic range and spatial resolution necessary for these scientific
applications. State-of-the-art CMOS image sensor (CIS) technology has experienced
dramatic improvements recently and their performance is rivaling or surpassing that of
most CCDs. The advancement of CIS technology is at an ever-accelerating pace and is
driven by the multi-billion dollar consumer market. There are several advantages of CIS
over traditional CCDs and other solid-state imaging devices; they include low power,
high-speed operation, system-on-chip integration and lower manufacturing costs. The
combination of superior imaging performance and system advantages makes CIS a good
candidate for high-sensitivity imaging system development.
This paper will describe a 1344 x 1212 CIS imaging system with a 19.5μm pitch
optimized for x-ray scattering studies at high-energies. Fundamental metrics of linearity,
dynamic range, spatial resolution, conversion gain, sensitivity are estimated. The
Detective Quantum Efficiency (DQE) is also estimated. Representative x-ray diffraction
images are presented. Diffraction images are compared against a CCD-based imaging
system.
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