Gain switching of 1.55 μm QDash Lasers directly grown on Silicon

This paper reports the gain-switched InP-based $\boldsymbol{1.55 \mu\mathrm{m}}$ Qdash lasers on silicon. We investigated the laser performance and related physical parameters by carrying out gain-switching test for lasers on Si and InP. The future direction of improving laser performance was pointed by analyzing the parameters.