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Characterization of 256 Kbits SRAMs under californium 252 and protons irradiations
Characterization of 256 Kbits SRAMs under californium 252 and protons irradiations
1991
Patrice L. Chabannes
Jean-Marie Hess
Jacques Buisson
J.-P. Brunet
Keywords:
Californium
CMOS
Nuclear chemistry
Radiochemistry
Single event upset
Proton
Static random-access memory
Materials science
Correction
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