A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

Annealing effects on electrical characteristics and reliability of MOS device with HfO"2 or Ti/HfO"2 high-k dielectric are studied in this work. For the sample with Ti/HfO"2 higher-k dielectric after a post-metallization annealing (PMA) at 600^oC, its equivalent oxide thickness value is 7.6A and the leakage density is about 4.5x10^-^2A/cm^2. As the PMA is above 700^oC, the electrical characteristics of MOS device would be severely degraded.