High-performance 1.3 /spl mu/m lasers for analog and digital applications

InGaAsP lasers incorporating strained quantum wells have recently shown superior performance in the 1.3 /spl mu/m band. We report both high-power, low RIN lasers and high-speed, low theshold lasers obtained from strained quantum well material. In conclusion, we have demonstrated high-performance 1.3 /spl mu/m lasers obtained from strained quantum well material. Lasers can be optimized for both analog and digital applications.