Self-ordering in CdSe/ZnSe, CdSe/(Zn,Mn)Se, InSb/GaSb, and InSb/InAs quantum dot structures and a novel type of quantum dot

CdSe quantum dots (QDs) in a ZnSe matrix, quasi-2D CdSe platelets in a (Zn,Mn)Se matrix, and InSb QDs in InAs and GaSb matrices are characterized by transmission electron microscopy (TEM) in the scanning electron-probe and the parallel-illumination modes. A phenomenological scheme of selfordering of QDs from the literature is used as a tool for the classification of laterally self-ordered arrangements of these QDs and their predecessor islands. Modified growth conditions led in all studied cases to self-ordered QD and island arrangements of higher levels. CdSe and InSb rich agglomerates of varying sizes (approximately 5 nm to a few 100 nm) with different types of internal compositional modulation have been formed by self-ordering on an atomic scale, potentially forming a new type of QDs and suggesting that the self-ordering process may be of a dissipative nature.