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6-10GHz Cryogenic GaAs pHEMT LNA MMIC
6-10GHz Cryogenic GaAs pHEMT LNA MMIC
2019
Shimizu Hayato
Iwashita Yudai
Iwamoto Ryotaro
Kawaguchi Tamio
Nishikawa Kenjiro
Keywords:
Monolithic microwave integrated circuit
High-electron-mobility transistor
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