Interference harmonics and rigorous EM spectrum analysis method for low-k1 CD Bossung tilt correction
2013
This paper discusses the CD Bossung tilt phenomena in low-k1 lithography using interference harmonics and rigorous
EM spectrum analysis. Interference harmonics analysis is introduced to explain the interaction of diffraction orders in the
focal region leading to this abnormal CD behavior. This method decomposes the vector image formula into a
superposition of cosine components to describe the interference of diffraction orders. The symmetry properties of
components of an optical projection system were investigated to find out three potential sources for the asymmetric
Bossung behavior, namely mask 3D (M3D) effect, lens aberration, and wafer reflectivity. Under good lens aberration
and substrate reflectivity controls, the M3D effect accounts for most of the CD Bossung tilt. A rigorous EM mask
spectral analysis was performed to reveal the impact of mask topography on the near-field intensity of mask transmission
and the far-field image formation. From the analysis, the asymmetric phase distribution in the mask spectrum is the root
cause for CD Bossung tilt. Using both the interference harmonics and the rigorous EM spectrum analysis, the effect of
various resolution enhancement techniques (RET) to the Bossung tilt is also studied to find the best RET combination for
M3D immunity. In addition, a pupil optimization algorithm based on these two analyses is proposed to generate the
phase compensation map for M3D effect counteraction.
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