Electronic spectrum and transport phenomena of quasi-gapless semiconductors CdSnAs2 at high pressure

Abstract Hall coefficient R, and conductivity [sgrave] were investigated at T = 2–300K up to H = 15 ke and P = 1.5 GPa. Under pressure influence, transition from disactivational to jump conductivity with a variable step both for electrons of the conductivity band (CB)—that is Anderson transition, and holes of the acceptor resonance band (AB)—that is resonance hybrizational Mott transition (RG MT), occur. In delocalization direction, RG MT was accompanied by increasing of the AB hole mobility of CB electrons. Energy dependence of density of states g(e) had found at 170meV lower of the unperturbated CB edge.