Light-emitting device and manufacturing method thereof
2004
The present invention provides a light emission with high efficiency can be realized by a high output emission light emitting device using a nitride semiconductor and a manufacturing method, in order to achieve this object, the light-emitting element comprising a GaN substrate (1), and the GaN substrate ( 1) a first main surface side of the light emitting layer containing InAlGaN4 element mixed crystal.
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