Absorption saturation in semiconductors under local irradiation by short light pulses

The theoretical study of the some processes taking place under the intense light excitation of the small area of the semiconductor surface by the short laser pulse had been carried out. The results of the performed analysis show that the absorption due to the 'impurity depletion' must be taken into account in the processes of the ultra-short pulse action on the extremely sn1all areas of semitransparent materials.© (2004) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.