Device Characteristics of LongWavelength Lasers Based on SelfOrganized Quantum Dots

The current state of the field of semiconductor lasers operating in the spectral range near 1.3 μm and with an active region represented by an array of selforganized quantum dots is reviewed. The threshold and temperature characteristics of such lasers are considered; the problems of overcoming the gain saturation and of an increase in both the differential efficiency and emitted power are discussed. Data on the response speed under conditions of direct modulation and on the characteristics of lasers operating with mode syn� chronization are generalized. Nonlinear gain saturation, the factor of spectral line broadening, and the for� mation of broad gain and lasing spectra are discussed.