Analysis of the Main Defects and Its′ Origin on HgCdTe Film Grown by LPE

This paper reviews the study on the classification,characteristics,origination and eliminating methods of the main defect on LPE epilayers grown by LPE.By measurement and assessment of the defects in HgCdTe epilayers,it can be possible to improve the growth procedure to meet the demanding requirements of future generation large format focal-plane arrays.