k ⋅ p calculations of bismuth induced changes in band structure of InN1−xBix, GaN1−xBix and AlN1−xBix alloys

Valence band anticrossing (VBAC) model is used to investigate band structure of InN1−xBix, GaN1−xBix and AlN1−xBix for the purpose of optimal performance group-III nitride related devices. Obvious reduction in band gap and increase in spin–orbit splitting energy are founded by doping dilute concentration of bismuth in all these III-N material. The band gap of GaN1−xBix and AlN1−xBix show a step change, and this can be explained by the special position relation between of Bi impurity energy level with corresponding host’s band offsets. We also show how bismuth may be used to form alloys by finding the doping region ΔSO > Eg which can provide a means of suppressing non-radiative CHSH (hot-hole producing) Auger recombination and inter-valence band absorption. For InN1−xBix, bismuth concentration beyond 1.25% is found to be corresponding to the range of ΔSO > Eg and it shows a continuous adjustable band gap from 0.7 eV to zero. This may make InN1−xBix a potential candidate for near or mid-infrared optoelectro...