Research on the planarity in the copper Chemical mechanical polishing process

The chemical-mechanical polishing of copper (Cu-CMP) is considered as an indispens-able planarization technology for the multi-layer interconnection fabrication in the ULSI. The sur-face defects such as dishing, erosion can reduce the thickness of copper interconnection and en-large electrical resistance, reduce both the performance and the reliability of device, further influ-ence WIWUN which cause imprecise pattern transfer in the multi-layer interconnect. In this paper,the module, simulation research and experimental investigations on the planarity of Cu-CMP areintroduced, and the influencing of CMP parameters, such as slurry, line width, pattern density,velocity of polishing and load, to erosion,dishing and WIWNU are emphatically analyzed.