Process for producing a semiconductor substrate and semiconductor substrate obtained thereby

The invention relates to a process for producing a semiconductor substrate (1), comprising the steps of: Providing at least one dispenser-type semiconductor substrate (2), comprising at least one useful layer of silicon (3); Check the donor substrate (2) by using a testing machine (4) to determine whether the useful layer (3) contains resulting voids whose size is greater than or equal to a critical size, the critical size is strictly smaller than 44 nm ; and fabricating a semiconductor substrate (1), comprising at least part of the useful layer (3) of the donor substrate (2), when with regard to the cavities with a size that is greater than or equal to the critical size, the density or the number of cavities in the useful layer (3) of the donor substrate (2) is less than or equal to a critical density, or number of defects.