TDDB in a Deuterated Low-k Interlayer Dielectric

The behavior of normal and deuterated SiOC:H where the hydrogen in the dielectric was supplanted by deuterium was compared. The deuterated SiOC:H was seen to be significantly resistant to damage from TDDB (Time Dependent Dielectric Breakdown). These results strongly support the “Lucky Electron” model for TDDB degradation in low-k dielectrics containing hydrogen.