Method of reducing the waviness of the semiconductor wafer

(57) Abstract: using a plasma assisted chemical etching, discloses a method for reducing the undulation of the semiconductor wafer. The method of the surface contour at discrete points in one surface of the separate wafers from facing surfaces was measured, based on the measured surface profile, to calculate the dwell time for position map, each of the wafer by plasma assisted chemical etching by selectively removing material from the surface, including reducing the waviness of the wafer.