Hot-electron noise spectroscopy for HFET channels

The microwave noise is used for experimental investigation of power dissipation in the channels for heterostructure field-effect transistors (HFETs). The problem is treated in terms of the hot-electron energy relaxation and the hot-phonon effect. The energy relaxation time and the hot-phonon lifetime are estimated for the GaN-based 2DEG channels at different electron densities, and the results are compared with those for bulk GaN and ZnO films.