Rapid thermal annealing of Al‐Si contacts

Contact formation of Al on n+‐Si by rapid thermal annealing has been investigated. It was found that contact resistivity of the order of 6×10−7 Ω cm2 can be reproducibly achieved. The uniformity of the contact area morphology is much improved due to the limited Si migration into the Al metallization. Flat contact morphology can be obtained with a combined technique of ion mixing and rapid thermal annealing.