Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

Abstract The rapid thermal annealing effects on thin Pt/Y 2 O 3 /Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y 2 O 3 /Si capacitor shows a sharp capacitance–voltage swing of a low oxide charge density ∼7.7×10 10 cm −2 and a minimum interface state density ∼3.6×10 10 cm −2  eV −1 . The depth-profiling X-ray photoelectron spectra show the annihilation of O–H bonding, and stabilization of Y–O bonding in the Y 2 O 3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si–Y–O–H bonding is persistent.