Old Web
English
Sign In
Acemap
>
Paper
>
The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing
The Ohmic Contact of 4H-SiC Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing
2020
Zi Wei Zhou
Zhen-zhong Zhang
Wei-wei He
Jian Yong Hao
Jun Sun
Feng Zhang
Ze Dong Zheng
Keywords:
Annealing (metallurgy)
Power semiconductor device
Optoelectronics
Pulsed laser deposition
Composite material
Ohmic contact
rapid thermal annealing
Materials science
Correction
Source
Cite
Save
Machine Reading By IdeaReader
20
References
0
Citations
NaN
KQI
[]