Determination of the entropy-factor of the gold donor level in silicon by resistivity and DLTS measurements

The parameters of the gold donor level inp-type silicon are determined from the temperature dependence of the free carrier concentration and from DLTS measurements. The entropy-factorX T is determined to be 20±2. In addition, the capture cross-section for holes σ p =5.5×10−15 cm2 and the reaction enthalpyH T −H v =0.35eV for the exchange of holes between the gold donor level and the valence band are obtained in the present investigation.