Highly strained direct bandgap Germanium cavities for a monolithic laser on Si
2016
Cavity enhanced photoluminescence at a wavelength as long as 5 μm is obtained in uniaxial tensile strained GeOI micro-bridges. We show, using temperature dependent photoluminescence spectroscopy, a crossover to fundamental direct bandgap and reveal from a mode analysis the free carrier induced loss increase.
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