Preparation and Application of Dislocation-Free Monocrystalline Silicon by CZ Method

This project studies the impact on ‹110› dislocation-free monocrystal grown by Czochralski method (hereinafter referred to as CZ) through puller's heat zone system and pulling process. Adjusting heat system appropriately, increasing pulling speed sharply, controlling the diameter and length in neck growth, controlling the speed in crown growth, increasing the length and diameter of tail, all of which are key elements to guarantee the success of ‹110› dislocation-free monocrystal pulling. The ‹110› dislocation-free monocrystal we developed under this project can be applied to optoelectronic devices for both semiconductor and solar industry. According to the verifications of the customer, the solar cell manufactured by ‹110› silicon monocrystal has unique features of ultra-thin and high efficiency. Furthermore, it can solve the problem caused by sheltering issue. Compared to traditional solar cell, silicon usage is 3 times less. As a result, it reduces the material cost dramatically.