Interfacial characterization of chemical solution‐deposited thin films of PbSe on GaAs(100)

The microstructure and composition of the interfacial layer between chemically deposited PbSe and GaAs substrates were studied using high-resolution transmission electron microscopy (HRTEM), Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS) and energy-filtered TEM. The thickness of the interfacial layer varied significantly from direct contact of the film with the substrate to 5 nm in the thickest regions. The results established the presence of a discontinuous, amorphous intermediate layer of Ga2O3 at the PbSe/GaAs interface. Copyright © 2008 John Wiley & Sons, Ltd.